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| XI'AN IR-PERI Company Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature o ]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK PRELIMINARY.2#6)7 ! " # VDSS=100V RDS(on) =0.009 ID=170A $ % Fast Switching Fully Avalanche Rated Benefits * * * * Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding,Mortor Control Lower EMI, requries less snubbing Absolute Maximum Ratings ID @ Tc=25oC ID @ Tc=100oC IDM PD @ Tc=25oC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate- to- Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Temperature Range Storage Temperature Range Parameter 170 120 670 580 3.8 Max. Units A W 30 1350 100 58 2.3 -55 to +175 -55 to +175 W/oC V mJ A mJ V/ns o C Termal / Mechanical Characteristics RJC RJC RCS Parameter Termal Resistance, Junction-to- Case- IBGT Termal Resistance, Junction-to- Case- Diode Termal Resistance, Csar-to- Sink- Module Mouting Torque, Case-to-Heatsink Mouting Torque, Case-to-Terminal 1,2 & 3 Weight of Module Typ. 0.1 - 0.26 0.36 4.0 3.0 - Max. Units o C/W N.m g 100 1 .2#6)7 XI'AN IR-PERI C ompany Min. 100 3.0 52 Electrical Characteristics @ TJ=25oC(unless otherwise specified) Parameter V(BR)DSS DV(BR)DSS/DTJ RDS(on) VGS(th gfe IDSS IGSS Qg Qgs Qgd td(on tr td(off tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Drain-to-Source Forward Current Drain-to-Source Reverse Current Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Intemal Drain Inductance Intemal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Typ. 0.11 260 49 160 24 270 45 140 5.0 13 6790 2470 990 10740 1180 2210 Max. 0.009 5.0 25 250 100 -100 390 74 250 Units V V/oC V S Conditions VGS=0V, ID=250A Reference to 25oC, ID=250A VGS=10V, ID=100A VDS=10V, ID=250A VDS=50V, ID=100A VDS=100V,VGS=0V VDS=80V,VGS=0V,TJ=125oC VGS=30V VGS=-30V ID=100A A nA nC VDS=80V VGS=10V VDD = 50V nS ID = 100A RG =1.03 VGS= 10V nH Between lead,6mm from package and center of die VGS = 0V VDS = 25V pF f =1.0MHZ VGS=0V,VDS=1.0V,f=1.0MHZ VGS=0V,VDS=80V,f=1.0MHZ VGS=0V,VDS=0V to 80V Dynamic Characteristics - TJ=125oC (unless otherwise specified) Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Forward Turn-On Time 220 1640 1.3 330 2460 V nS nC 670 Min. Typ. Max. 174 Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode TJ=25oC,IS=100A,VGS=0V TJ=25oC,IF=100A di/dt=100A/s Intrinsic turn-on time is negligible (turn-on is dominated by Ls+Ld) 2 |
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